Sign In | Join Free | My fazendomedia.com |
|
Transistor Polarity : N-Channel
Technology : GaN SiC
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 22 dB
Transistor Type : HEMT
Output Power : 180 W
Package / Case : NI400-2
Maximum Operating Temperature : + 85 C
Vds - Drain-Source Breakdown Voltage : 50 V
Packaging : Waffle
Maximum Drain Gate Voltage : 55 V
Id - Continuous Drain Current : 360 mA
Pd - Power Dissipation : 60.9 W
Manufacturer : Qorvo
Description : RF JFET Transistors 3.4-3.6GHz 50V 180 Watt GaN
![]() |
QPD3601 Images |
Friendly Links: www.everychina.com
Home| Products| Suppliers| Site Map |About Us |Contact Us |Help |关于我们 |联系我们
Thank you! Your message has been sent to the following suppliers.